skm800ga125d ? by semikron rev. 2.0 C 11.08.2016 1 semitrans ? 4 ga skm800ga125dfeatures homogeneous si npt-igbt v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x i c typical applications* resonant inverters up to 100 khz inductive heating electronic welders at f sw > 20 khz remarks i dc 500 a limited by terminals take care of over-v oltage caused by stray inductances absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1200 v i c t j = 150 c t c =25c 760 a t c =80c 530 a i cnom 600 a i crm i crm = 2xi cnom 1200 a v ges -20 ... 20 v t psc v cc = 600 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 720 a t c =80c 500 a i fnom 600 a i frm i frm = 2xi fnom 1200 a i fsm t p = 10 ms, sin 180, t j =25c 5760 a t j -40 ... 150 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =600a v ge =15v chiplevel t j =25c 3.20 3.70 v t j =125c 4.00 4.80 v v ce0 chiplevel t j =25c 1.50 1.75 v t j =125c 1.70 1.95 v r ce v ge =15v chiplevel t j =25c 2.83 3.25 m t j =125c 3.83 4.75 m v ge(th) v ge =v ce , i c = 24 ma 4.5 5.5 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.6 ma -m a c ies v ce =25v v ge =0v f=1mhz 37.2 nf c oes f=1mhz 5.6 nf c res f=1mhz 2.80 nf q g v ge = - 8 v...+ 15 v 4200 nc r gint t j =25c 0.5 t d(on) v cc = 600 v i c =600a v ge = +15/-15 v r g on =0.5 r g off =0.5 t j =125c 480 ns t r t j =125c 116 ns e on t j =125c 88 mj t d(off) t j =125c 666 ns t f t j =125c 58 ns e off t j =125c 48 mj r th(j-c) per igbt 0.03 k/w
skm800ga125d 2 rev. 2.0 C 11.08.2016 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 600 a v ge =0v chiplevel t j =25c 2.3 2.58 v t j =125c 1.87 2.38 v v f0 chiplevel t j =25c 1.10 1.45 v t j =125c 0.85 1.20 v r f chiplevel t j =25c 1.61 1.88 m t j =125c 1.70 1.96 m i rrm i f = 600 a v ge =15v v cc = 600 v t j =125c 370 a q rr t j =125c 83 c e rr t j =125c 28 mj r th(j-c) per diode 0.07 k/w module l ce 15 nh r cc'+ee' terminal-chip t c =25c 0.18 m t c =125c 0.22 m r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm m4 1.1 2 nm w 330 g semitrans ? 4 ga skm800ga125dfeatures homogeneous si npt-igbt v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x i c typical applications* resonant inverters up to 100 khz inductive heating electronic welders at f sw > 20 khz remarks i dc 500 a limited by terminals take care of over-v oltage caused by stray inductances
skm800ga125d ? by semikron rev. 2.0 C 11.08.2016 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
skm800ga125d 4 rev. 2.0 C 11.08.2016 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
skm800ga125d ? by semikron rev. 2.0 C 11.08.2016 5 semitrans 4 ga
skm800ga125d 6 rev. 2.0 C 11.08.2016 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes.
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